منابع مشابه
Point defect balance in epitaxial GaSb
All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not ...
متن کاملInvestigations into molecular beam epitaxial growth of InAs/GaSb superlattices
Approved: ____________________________________ Thesis Supervisor ____________________________________ Title and Department ____________________________________ Date 1 INVESTIGATIONS INTO MOLECULAR BEAM EPITAXIAL GROWTH OF INAS/GASB SUPERLATTICES by Lee Michael Murray A thesis submitted in partial fulfillment of the requirements for the Doctor of Philosophy degree in Physics in the Graduate Coll...
متن کاملDefect ordering in epitaxial a-GaN(QQ01)
The microstructure of nominally undoped epitaxial wurtzite-structure o-GaN films, grown by gas-source molecular-beam epitaxy, plasma-assisted molecular-beam epitaxy, and metalorganic chemical-vapor deposition, has been investigated by transmission electron microscopy (TEM) and high-resolution TEM. The results show that undoped a-GaN films have an ordered point-defect structure. A model of this ...
متن کاملCOMPUTATIONAL ENUMERATION OF POINT DEFECT CLUSTERS IN DOUBLE- LATTICE CRYSTALS
The cluster representation matrices have already been successfully used to enumerate close-packed vacancy clusters in all single-lattice crystals [I, 2]. Point defect clusters in double-lattice crystals may have identical geometry but are distinct due to unique atomic postions enclosing them. The method of representation matrices is extended to make it applicable to represent and enumerate ...
متن کاملNanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions
Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the accelerating voltage and ion dose. Although the same number of point defects were created in each ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2014
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4894473